| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-speed semiconductor light-receiving element for reducing the capacitance and preventing the response speed from decreasing. SOLUTION: A light-receiving layer 12, of a compound semiconductor, where a one-conductivity first semiconductor layer 11 and the light-absorbing layer 12 are successively formed on a substrate 10 is formed into a mesa shape. Then, a one conductivity second semiconductor layer 13 is formed and a reverse conductivity impurity region 14 is formed at its one portion. A reverse conductivity impurity region 14 is formed to have a P-N junction 18 in the semiconductor light-receiving element.
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