NITRIDE SEMICONDUCTOR LAYER, SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE AS WELL AS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a high-quality nitride semiconductor layer as well as a gallium nitride layer, a semiconductor element and a semiconductor device, which are capable of manufacturing a high performance device by the nitride semiconductor layer, and to provide the manufacturing method of them by reducing the occurrence of strain and stress due to the difference of thermal expansion coefficient between the nitride semiconductor and a substrate. SOLUTION: In the nitride semiconductor layer 2 (gallium nitride), grown on a different kind substrate 1, the gallium nitride layer 2 is constituted of the configuration of mutually independent circular cylinders or polygonal prisms, and the thickness of the gallium nitride layer 2 is specified so as to be 0.05 times or more of the diameter of the bottom circle of the circular cylinder or the longest diagonal line of the polygon among those of the bottom surfaces of the polygonal prism.