| 摘要 |
PROBLEM TO BE SOLVED: To stably and with satisfactory reproducibility, form an SiC semiconductor substrate which has floating doping layers for making a device have high dielectric strength. SOLUTION: A method of manufacturing an SiC semiconductor substrate includes a step, in which an n-type high resistance first SiC film 21 is formed on an n-type low resistance SiC substrate 20 through epitaxial growth, a step in which a resist film 22 having a plurality of apertures is formed on the first SiC film 21, a step in which p-type second SiC films 23 are formed on the parts of the SiC film 21 exposed from the apertures of the resist film 22 by epitaxial growth, a step in which the resist film 22 is removed and the substrate is subjected to surface treatment, and a step in which an n-type high resistance third SiC film 24 is formed by epitaxial growth. Further, the steps for forming the second SiC films 23 and the third SiC film 24 are repeated, to form a plurality of floating doping layers. |
