| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, where the base resistance is lowered without having to raise the threshold and the avalanche resistance can be improved, and to provide a manufacturing method therefor. SOLUTION: The semiconductor device is provided with a first conductivity semiconductor layer (2), a second conductivity semiconductor region (3) formed near the surface, a first conductivity semiconductor region (4) which is selectively installed in the second conductivity semiconductor region, a trench (T) reaching the first conductivity semiconductor layer from the first conductivity semiconductor region through a second semiconductor region, an insulating layer (7) disposed on the inner wall of the trench and an electrical conductor (6), with which the inner space of the insulating layer in the trench is filled. The second conductivity semiconductor region protrudes continuously toward the first conductivity semiconductor layer, so that it is detached from the trench.
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