| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that breakdown due to heat occurs since heat that is generated in the actuation of a semiconductor device cannot be dissipated to the outside efficiently. SOLUTION: The package for accommodating a semiconductor device comprises an insulating board 1 that has a mount section 1a where a semiconductor device 4 is mounted on the upper surface and a wiring layer where each electrode of the semiconductor device 4 that is led to the outside from the mount section 1a is connected, a lid body 2 that is attached onto the upper surface of the insulating board 1 and seals the mount section 1a for mounting the semiconductor device 4, and a radiator 3 that is attached to the lower surface of the insulating board 1. The insulating board 1 comprises a ceramic sintered body having thermal conductivity of 70 W/mk or more. At the same time, the radiator 3 is made of silicon carbide and copper and has a three-layer structure. In the three-layer structure, upper and lower layers 3a and 3c made of 75 to 90 wt.% silicon carbide and 10 to 25 wt.% copper are provided on both the surfaces of an intermediate layer 3b made of 35 to 65 wt.% silicon carbide and 35 to 65 wt.% copper. |
