| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique wherewith a crystalline semiconductor is obtained with the aid of a metal element capable of enhancing semiconductor film crystallization and then the metal element residual in the film is effectively removed for a reduction in variation among elements. SOLUTION: In the process of forming a barrier layer to be provided on a semiconductor film having a crystalline structure, the plasma CVD method is used with the monosilane and nitrous oxide serving as material gas. In a process of forming a gettering site, the plasma CVD method is used, and gettering is performed after the formation of a semiconductor film containing a high concentration, specifically 1×10<20> to 1×10<21> /cm<3> , of a rare gas and having an amorphous structure, typically an amorphous silicon film. |
