| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for semiconductor device with which high density wiring is formed, and a production method for substrate for semiconductor device with which conductive coating such as metal coating can be easily and furely formed on a surface in one part of the conductor pattern of the substrate for semiconductor device by electrolytic plating. SOLUTION: A hole 22 for via is formed on an insulating layer 21 of a core substrate 10 having wiring layers 12 on both the surfaces of an insulating substrate 11 and a slave conductor layer 23 is formed. A resist pattern 24 is formed on the slave conductor layer 23, and a main conductor layer 25 and a via hole 26 are formed by electrolytic copper plating. The resist pattern 23 is released by a dedicated releasing liquid, a resist pattern 27 is formed, a wiring pattern 31 and a conductive lead 23b for electrolytic plating are formed, conductive material coating 29 composed of nickel or gold coating is formed on the surface in one part of the main conductor layer 25 by electrolytic plating, and the conductive lead 23b for electrolytic plating is removed by etching so that the substrate for semiconductor device can be provided. |
