发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device having fine-patterned resistor elements. SOLUTION: This semiconductor device comprises a pair of first resistor terminals 3 formed on an element-isolation region of a semiconductor substrate, a pair of second resistor terminals 3 formed apart from the pair of the first resistor terminals by a first distance on an element-isolation region, a first resistor part 2 formed between the pair of the first resistor terminals to connect them, having a width narrower than those of the first resistor terminals, and formed on the element-isolation region, a second resistor part 2 formed between the pair of the second resistor terminals to connect them, having a width narrower than those of the second resistor terminals, and formed apart from the first resistor part by a second distance E, which is larger than the first distance, and parallel to the first resistor part, on the element-isolation region, and a dummy electrically-conductive layer 4 formed on the semiconductor substrate or the element-isolation region between the first resistor part and the second resistor part, and not functioning as an element.
申请公布号 JP2003100888(A) 申请公布日期 2003.04.04
申请号 JP20010295384 申请日期 2001.09.27
申请人 TOSHIBA CORP 发明人 FUTAYAMA TAKUYA
分类号 H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L23/52;H01L23/522;H01L23/532;H01L27/04;H01M4/02;H01M4/38;H01M4/40;H01M4/62;(IPC1-7):H01L21/822;H01L21/320 主分类号 H01L21/3205
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