发明名称 RESIST REMOVING COMPOSITION AND METHOD FOR REMOVING RESIST USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a resist removing composition excellent in power to remove not only a resist but also an etching by-product such as a polymer, causing no damage to a film under the resist and having such a moderate viscosity as not to leave residua and residue after rinsing with deionized water. SOLUTION: The resist removing composition comprises an alkoxy N- hydroxyalkylalkaneamide, a swelling agent and, optionally, one or more compounds selected from the group comprising polar materials having a dipole moment of >=3, damage preventers and alkanolamines.
申请公布号 JP2003098691(A) 申请公布日期 2003.04.04
申请号 JP20020165960 申请日期 2002.06.06
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK DONG JIN;KIM KYUNG DAE;CHON SANG-MOON;KO SHINKO;SOHN IL HYUN;PARK SANG-O;JUN PIL KWON
分类号 G03F7/32;C11D1/52;C11D7/26;C11D7/32;C11D7/34;C11D7/50;C11D7/60;C11D11/00;G03F7/42;H01L21/027;H01L21/3065;(IPC1-7):G03F7/42;H01L21/306 主分类号 G03F7/32
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