| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate developing apparatus and method with which the accurate resist pattern can be obtained. SOLUTION: During the developing process, the substrate W is irradiated with the laser beam by means of a probe 81 located nearer to the substrate W and the scattered beam from the developer supplied to the substrate W is seized. Moreover, concentration of the benzene ring in the developer is measured with a Raman spectroscopic processing unit 85 and amount of elution of benzene ring eluted to the developer from resist film is always monitored based on such concentration. Since the amount of elution increases with progress of developing process, the developing process is completed when the amount of elution reaches the value corresponding to the point where the developing process should be completed. |
