| 摘要 |
PROBLEM TO BE SOLVED: To provide various types of high performance semiconductor devices such as a field-effect transistor which can operate at high frequency, with high output and high efficiency by realizing a stable, low resistance ohmic contact. SOLUTION: This semiconductor device comprises a first nitride semiconductor layer (11), a second nitride semiconductor layer (12) which is formed on the first layer and has a larger band gap than that of the first layer, and an electrode (18) formed on the second layer. The second nitride semiconductor layer has lattice distortion caused by the difference in lattice constants between the first layer and the second layer, and by tunneling electrons accumulated in the vicinity of the heterointerface (H) of the first nitride semiconductor layer into the n-side electrode, the contact resistance of the n-side electrode can be reduced.
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