| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element of superior operating characteristics by improving quality of crystal in an active region and the peripheral part thereof. SOLUTION: With the temperature of a substrate setting at 1020 deg.C, an n-type clad layer 14 comprising n-type Al0.1 Ga0.9 N, an n-type optical guide layer 15 comprising n-type GaN, and a flatness maintaining layer 16 comprising n-type Al0.2 Ga0.8 N that suppresses re-evaporation of constituting atoms of the n-type optical guide layer 15 to maintain flatness of the surface of the n-type optical guide layer 15 are grown in this order on a substrate 11 comprising sapphire. Then supply of group III source gas is made to stop, the temperature of the substrate is lowered to 780 deg.C, and carrier gas is switched from hydrogen gas to nitrogen gas. Then NH3 , and TMI and TMG are selectively introduced into a group V source and a group III source, respectively, so that an active layer 17 comprising a multiple quantum well structure is grown.
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