| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an SOI substrate which is resistant to ESD destruction and whose crack in the dicing process is prevented, and a high-precision analog IC on which a complete depletion-type high-speed MOS transistor and a high-withstand-voltage MOS are consolidated on the SOI substrate. SOLUTION: A fuse device for laser trimming and a bleeder are formed of a single-crystal silicon device forming layer on a SOI substrate.
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