| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, which can reduce the particles adhering to a substrate by controlling the generation of the particles caused by peeling of a precoated film applied to an inner wall of a reaction chamber, and can conduct dry cell cleaning after the substrate is continuously treated by desired times in the substrate treatment by a plasma CVD method. SOLUTION: A plasma discharge treatment process 120 is conducted between the precoated film-forming process 110 and the substrate treatment process 130. In the plasma discharge treatment process 120, the plasma is generated by introducing a gas, which does not contribute to film formation buy itself into the reaction chamber of a plasma CVD device and an atomic bond, included in the film is stabilized, by the plasma discharge treatment of the film adhered to the inner wall of the reaction chamber. Generation of the particles, caused by peeled blocks the film, is controlled by stabilizing the atomic bond included in the film during the substrate treatment process 130 in a production line.
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