发明名称 METHOD AND APPARATUS FOR TREATMENT OF SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To evenly and quickly perform an adjusting work for improving a state when a coating film at the outer circumferential part of a wafer is removed. SOLUTION: A removing solution mixer 61 is arranged in a coating processor 17. In a memory of a main controller 81, a plurality of removed state patterns of coating films obtained by preliminary experiments or the like and a mixing ratio of the prescribed removing solution corresponding to each removed state pattern are memorized. The prescribed removing solution can improve the removed state of a coating film, which is determined on a removed state pattern basis in advance. A CCD camera 80 is arranged in the coating processor 17. After the coating film at the outer circumferential part of the wafer W is removed, the removed state of the coating film at the outer circumferential part of the wafer W is picturized by the CCD camera, and a removed state pattern which is similar to the picture data among the removed state patterns in the memory part is selected. By the removing solution mixer 61, the mixing ratio of the prescribed removing solution is changed to the optimal mixing ratio corresponding to the selected removed state pattern.
申请公布号 JP2003100704(A) 申请公布日期 2003.04.04
申请号 JP20010297292 申请日期 2001.09.27
申请人 TOKYO ELECTRON LTD 发明人 NAGASHIMA SHINJI;KAWABUCHI YOSUKE;IDE HIROYUKI
分类号 B08B3/02;B05C9/12;B05C11/00;B05C11/08;B05D1/40;B05D3/00;B08B3/08;H01L21/306;(IPC1-7):H01L21/306 主分类号 B08B3/02
代理机构 代理人
主权项
地址