| 摘要 |
PROBLEM TO BE SOLVED: To prevent outflow of the residual gas in a treatment. SOLUTION: This plasma etching apparatus 10 comprises a chamber 12 having an etching chamber 12a, an XYZ table 16 on which a silicon wafer 14 is loaded, an actuator 18 for the XYZ table 16, a nozzle 20A, and a magnetron 24 for generating a plasma from a process gas fed to the nozzle 20A. The nozzle 20A concentrically comprises a gas injection outlet 26 opening at the center of the fore end face (a lower face), a gas exhaust slot 28 circularly formed so as to surround the periphery of the gas injection outlet 26, and an air current injection outlet 30 circularly formed so as to surround the periphery of the exhaust vent 28. In etching, the gas pressure fed from an air-supply pump 42 is injected from the air current injection outlet 30 toward the surface of a wafer 14. This air current injected from the air current injection outlet 30 shuts off the periphery of the exhaust slot 28 as an air curtain for preventing outflow of the residual gas in etching. |
