| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which can easily control and set up the adequate state of multipole magnetic fields corresponding to the kind of the plasma treatment, and can easily execute a good treatment. SOLUTION: In each magnetic segment 22 of a magnetic field forming mechanism 21, as shown in Fig. 3 (a), starting from a state wherein magnetic poles of each magnetic segment 22 face vacuum chamber 1, as shown in Fig. 3 (b), Fig. 3 (c), adjacent magnetic segments 22 synchronously rotate in the counter direction, namely, every other magnetic segments 22 rotate in the same direction, which makes it possible to control the state of the multipole magnetic fields formed around a semiconductor wafer W in the vacuum chamber 1. |
