| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a reflection preventive film capable of realizing a reflection preventive film capable of generating desired reflectivity and extinction coefficient. SOLUTION: A processor 1 is provided with a twin chamber 3 having two chambers. Then, SiH4 gas, N2 O gas and He gas is supplied through a shower head part 40 connected to a high frequency power source R to each chamber 4 in which an Si wafer W is housed so that a reflection preventive film constituted of an SiON film can be formed. Afterwards, while only the N2 O gas is supplied, plasma is formed in the chamber 4, and the oxidization and modification of the reflection preventive film is carried out by an active species. Thus, the composition of the SiON film or the change of the structure can be generated, and the reflectivity and extinction coefficient of the reflection preventive film can be set so as to be desired values. |
