| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor wafer which has low distortion in current/voltage characteristics and does not cause deterioration of distortion in current/voltage characteristics, and to provide a field-effect transistor using the same. SOLUTION: In this compound semiconductor wafer 1 formed by growing a plurality of compound semiconductor layers 3 on the substrate 2 respectively, a buffer layer 4 is grown on the substrate 2 by a liquid phase epitaxial method, and respective compound semiconductor layers 3 are grown on the buffer layer 4 by a vapor phase growth method.
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