| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for forming the Si1-x-y Gex Cy crystal of proper quality, whose inter-lattice C concentration is low, since C atoms have the property that it tends to infiltrate not only in the lattice position of crystal but also between the lattices. SOLUTION: A IV semiconductor crystal, which contains C, is deposited and Si is deposited on it. Then, Si is oxidized and removed. Thus, a IV semiconductor mix crystal including C of proper quality, whose C concentration in a mix crystal semiconductor constituted of a IV element containing C which exceeds 1×10<17> /cm<3> , is manufactured.
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