| 摘要 |
PROBLEM TO BE SOLVED: To form a large-grain polycrystalline silicon film at a low process temperature, high throughput rate, and low cost. SOLUTION: A 1st insulating layer, a light absorbing layer using any of the metals W, Cr, Ti, and a 2nd insulating layer are provided on a semiconductor layer. Beams generated from a plurality of linear lamp light sources having their peak wavelength in the vicinity of 1μm are converged on the light- absorbing layer for treatment by use of a reflecting optical system having an elliptic reflector.
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