| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor capable of suppressing the occurrence of a leak current and oxidation of barrier metal, and to provide a manufacturing method for a semiconductor element having the capacitor. SOLUTION: A manufacturing method for a capacitor contains a process wherein a ruthenium (Ru) layer serving as a conduction layer 40 for a lower electrode of a capacitor is grown on the surface of a conductive film 125, formed on a semiconductor substrate 100, and insulation films 105A and 130A by using, in the order, Plasma Enhanced Chemical Vapor Deposition, (herein after described PECVD) and Low Pressure Chemical Vapor Deposition, (herein after describe LPCVD) methods; a process wherein a conduction layer 140 for a lower electrode is patterned to form a lower electrode 140A of a capacitor; a process wherein a dielectric film 145 is formed on the surface of the lower electrode 140A; and a process wherein an upper electrode 150 of the capacitor is formed on the surface of the dielectric film 145. |
