SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To increase the yield of an embedded conductive layer at the time of forming contact holes without leaving a mechanically damaged layer on the surface of an interlayer insulating layer. SOLUTION: A first interlayer insulating layer is formed on a semiconductor substrate layer. Trenches are formed in the first interlayer insulating layer and a conductive layer is formed on the first interlayer insulating layer by filing the trenches with the conductive layer. The surface of the substrate is polished after forming the conductive layer for forming a flat surface from which the first interlayer insulating layer and the conductive layer are exposed. Further, a damaged layer by polishing on the surface of the first interlayer insulating layer is removed by etching. An insulating layer is formed by a coating method on the surface of the substrate after etching. Subsequently, a second interlayer insulating layer exhibiting a high etch selectivity relative to the insulating film is formed on the insulating film.