| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents a short-circuit failure caused when a wire material is alloyed with a pad material to a certain extent. SOLUTION: On the surface of an insulating film (13) on a silicon substrate (12), a first 1st aluminum electrode (14) and a second 1st aluminum electrode (15) are formed apart. Then an interlayer insulating film (16), a 2nd aluminum electrode (17) and a wire ball (11) are formed thereon. At this time, the 1st aluminum electrode (12) and the 2nd aluminum electrode (17) are formed in such a way that they are completely insulated from each other by the interlayer insulating film (16) directly under the wire ball (11). |
