| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same in which an insulating film including fluorine and having low relative permittivity is used and the electo-migration resistance can be improved. SOLUTION: The semiconductor device comprises a semiconductor substrate 101, an insulating film 102 serving as a backing layer of a wiring layer formed on the semiconductor substrate 101, and a lower layer wire 103 made of an AlCu film formed on the insulating film 102. On the lower layer wire 103 and the insulating film 102, a Si-rich SiO2 film 104A, a SiO2 (FSG) film 104B including fluorine, a plasma SiO2 film 104C, and a plasma SiON film 104D are formed sequentially, and these four layer films make up a first interlayer insulating film 104. Therefore, the Si-rich SiO2 film 104A formed between the lower layer wire 103 and the FSG film 104B prevents fluorine from diffusing from the FSG film 104B to the lower layer wire 103.
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