| 摘要 |
PROBLEM TO BE SOLVED: To make the current consumption of a semiconductor memory device such as a pseudo SRAM equal to that of an SRAM. SOLUTION: The device comprises a specific pn junction region set to a cut off state out of pn junction regions formed on the same semiconductor substrate as a memory cell array, has a temperature detecting element outputting a leak current flowing in the specific pn junction region, and is provided with a temperature detecting section detecting temperature variation of the semiconductor memory based on a leak current outputted from the temperature detecting element, and a temperature characteristic control section controlling a generation period of the refresh-timing signal in accordance with a detected result of the temperature detecting section. |
