| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device where after-image quantity is reduced, and to provide a manufacturing method therefor. SOLUTION: The solid-state image pickup device is provided with a gate electrode 14 which is selectively formed on a P-type semiconductor layer 10 through a gate insulating film 12, an N-type first diffusion layer 15 formed on the surface of a semiconductor layer 10 at one end of the gate electrode 14, an N-type second diffusion layer 17 formed on the surface of the semiconductor layer 10 at the other end of the gate electrode 14, an N-type charge accumulation layer 19 which is brought into contact with the second diffusion layer 17 and is formed in the semiconductor layer 10 and a P-type surface shield layer 21 formed on the charge storage-layer 19. The impurity concentration of the charge storage layer 19 is made within the range of 1×10<16> cm<-3> to 18×10<16> cm<-3> .
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