| 摘要 |
PROBLEM TO BE SOLVED: To improve through-put, and to precisely form a fine resist pattern. SOLUTION: A resist 2 is applied to a substrate 1, and a photosensitive layer 3 is formed of a substance with breaching effects. The photosensitive layer 3 is exposed through a mask 4 so that a transparent photosensitive region 6 can be formed. Full exposure is carried out by full exposing light 7, and the resist 2 is sensitized by the scattered light of adjacent field light 8 exposed from the photosensitive region 6. Thus, it is possible to obtain a resist pattern 10 having a space pattern whose resolution is half of that of the photosensitive region 6 obtained by exposure using the mask 4. At that time, the photosensitive layer 3 having the transparent photosensitive region 6 formed by exposure using the mask 4 is used as a mask pattern in order to carry out the full exposure so that. the through-put can be sharply improved. Also, the number of times of alignment can be reduced to only one time, and the deterioration of alignment precision, pattern linking precision, and exposing precision can be prevented. |
