| 摘要 |
PROBLEM TO BE SOLVED: To form a high quality film through control of the over-baking by suppressing influence of heat on a coating processing section from a heating section and by accurately controlling the heating time in the heating section. SOLUTION: The first processing section S1 is provided with a coating unit for coating wafer with the coating solution, while the second processing section S2 is provided with a heating unit 45 for baking to perform the baking process to the wafer coated with the coating solution, a heating unit 47 for curing to perform the curing process to the wafer after the baking process, a substrate setting section 5 for setting the wafer after the baking process and/or the curing process, and a second transferring means 44 for transferring the wafer among the heating unit 45 for baking, heating unit 47 for curing and a substrate setting section 5. The over-baking can be suppressed by holding the wafer after the baking process with the substrate setting section 5, and transferring the wafer to the heating unit 47 for curing after the preceding wafer having completed the curing process is transferred to the next process. |
