| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method which can improve uniformity of the depth of etching over the surface of a wafer. SOLUTION: In this dry etching method, the primary rear surface of a silicon wafer W is covered with a thermal buffer film 20, and the primary front surface of the silicon wafer W is etched while the thermal buffer film 20 is cooled by blowing a cooling gas or the like. The thermal buffer film 20 is integrally formed with the silicon wafer W, and a silicon oxide film having a smaller heat conductivity than that of a single crystal or a silicon nitride film is adopted. Since the thermal buffer film 20 reduces the dispersion of cooling temperature over the surface, the temperature over the surface to be etched can be uniformalized, and then the uniformity in etching depth can be improved.
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