| 发明名称 |
FILM FORMATION METHOD, INSULATING FILM AND SUBSTRATE FOR SEMICONDUCTOR |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a film formation method capable of restraining diffusion of copper to an interlayer film from a copper substrate used for a semiconductor element or the like. SOLUTION: This film formation method is characterized in that (A) a solution of a compound having complex formability with copper is applied to the surface of the substrate having copper wiring and thereafter (B) the insulating film is formed.
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| 申请公布号 |
JP2003100148(A) |
申请公布日期 |
2003.04.04 |
| 申请号 |
JP20010291641 |
申请日期 |
2001.09.25 |
| 申请人 |
JSR CORP |
发明人 |
NISHIKAWA MICHINORI;EGAWA HIROMI;OKADA TAKASHI;SHIMOMURA HIROMI;YAMADA KINJI |
| 分类号 |
C08G65/38;H01B3/30;H01B3/42;H01B3/46;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01B3/30 |
主分类号 |
C08G65/38 |
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