发明名称 PROCEDE DE CARACTERISATION D'UNE ETAPE D'IMPLANTATION DANS UN SUBSTRAT DE MATERIAU
摘要 The invention relates to a method of characterising, ex-situ, the implantation dose of at least one species in a substrate. The inventive method is characterised in that it comprises: an annealing step that is intended to cause the blistering of the species in the implanted substrate; a substrate surface image acquisition step; and an image processing step. The implantation dose characteristics are deduced from the image processing step.
申请公布号 FR2830372(A1) 申请公布日期 2003.04.04
申请号 FR20010012507 申请日期 2001.09.28
申请人 SOITEC SILICON ON INSULATOR 发明人 MALEVILLE CHRISTOPHE;SCHWARZENBACH WALTER
分类号 G01N25/72;H01L21/265;H01L21/324;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01N25/72
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