发明名称 |
PROCEDE DE CARACTERISATION D'UNE ETAPE D'IMPLANTATION DANS UN SUBSTRAT DE MATERIAU |
摘要 |
The invention relates to a method of characterising, ex-situ, the implantation dose of at least one species in a substrate. The inventive method is characterised in that it comprises: an annealing step that is intended to cause the blistering of the species in the implanted substrate; a substrate surface image acquisition step; and an image processing step. The implantation dose characteristics are deduced from the image processing step.
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申请公布号 |
FR2830372(A1) |
申请公布日期 |
2003.04.04 |
申请号 |
FR20010012507 |
申请日期 |
2001.09.28 |
申请人 |
SOITEC SILICON ON INSULATOR |
发明人 |
MALEVILLE CHRISTOPHE;SCHWARZENBACH WALTER |
分类号 |
G01N25/72;H01L21/265;H01L21/324;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G01N25/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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