| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an abrasive composition which can solve the problem that, when a semiconductor device having copper films and a tantalum compound is polished, the polishing selection rates against the copper and tantalum compound become insufficient and, when the polishing selection rate against the copper is raised, copper films in wiring grooves or holes are over-polished or the surface smoothness of the copper films is impaired. SOLUTION: This abrasive composition is composed of (A) an abrasive, (B) benzotriazole, (C) tartaric acid, (D) hydrogen peroxide, (E) polyvinyl alcohol, and (F) water. The abrasive is composed of an organic high-molecular compound having a mean particle diameter of 5-100 nm and contained in this composition at a concentration of 5-30 wt.%. The concentration of the benzotriazole in this composition is adjusted to 0.01-3 wt.%.</p> |
