发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To supply electric power so that respective memory banks of a DRAM can stably be operated and to reduce power consumption. SOLUTION: This semiconductor memory device is provided with a plurality of arrays forming one group of memory bank with two arrays, a first plurality of power sources supplying drive power to peripheral circuits driving each of a plurality of arrays, and a second plurality of power sources supplying access power to word lines accessing a plurality of arrays. More concretely, a plurality of arrays are arranged in a matrix state so as to surround a central region of a semiconductor substrate, the first plurality of power sources are provided at a central region side and an opposite side holding a specific array out of a plurality of arrays between them, the second plurality of power sources are arranged at four corners of the central regions, and forms one memory bank. The first plurality of power sources supply electric power to groups of arrays arranged apart by a main power source supplying main power and an auxiliary power source supplying auxiliary power being smaller the main power.
申请公布号 JP2003100075(A) 申请公布日期 2003.04.04
申请号 JP20010291647 申请日期 2001.09.25
申请人 MITSUBISHI ELECTRIC CORP;MITSUBISHI ELECTRIC ENGINEERING CO LTD 发明人 ISHIDA KOZO;YONETANI HIDEKI;OGAMI TAKESHI
分类号 G11C11/407;G11C5/14;G11C11/401;G11C11/4074;(IPC1-7):G11C11/407 主分类号 G11C11/407
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