| 摘要 |
PROBLEM TO BE SOLVED: To make the color blue in the light emitted by an AlGaInN light- emitting diode. SOLUTION: On a sapphire substrate 1, a 500 Å AlN buffer layer 2, a high carrier-concentration n<+> layer 3, made of silicon-doped GaN whose film thickness is approximately 2.2 μm and electron concentration is 2×10<18> /cm<3> , a low carrier- concentration n layer 4, made of non-doped GaN whose film thickness is approximately 0.5 μm and electron concentration is 1×10<16> /cm<3> , an active layer 5 that has a film thickness of approximately 0.5 μm and is made of Mg and S-doped GaN, and an Mg-doped high carrier-concentration p<+> layer 6 that has a film thickness of approximately 0.2 μm and a hall concentration of 2×10<17> /cm<3> are formed successively. Since sulfur (S), that becomes a donor in the active layer is doped, the central wavelength of the light to be radiated can be shifted to the long wavelength side. |
