| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device having improve monochromatic properties, and to provide a manufacturing method of the semiconductor light-emitting device. SOLUTION: On an n-GaAs substrate 10, an n-GaAs buffer layer 110, an n-AlGaInP clad layer 102, an undoped AlGaInP active layer 103, a p-AlGaInP clad layer 104, and a p-AlGaInP intermediate bandgap layer 107 are laminated successively by an MOCVD method. Near the side of the semiconductor light- emitting device, one portion of the upper side of the p-AlGaInP middle bandgap layer 107 and the p-clad layer 104 is removed by etching. Then, a p-GaP current diffusion layer 105 is laminated on the substrate. After that, a first electrode 111 is formed over the entire surface of the substrate side, and a second electrode 112 is formed at the center region of the device on the side of a growth layer. |
