| 摘要 |
PROBLEM TO BE SOLVED: To improve the quality of a semiconductor device having ZnO as the thin film material. SOLUTION: A substrate 46 is formed with a single crystal of ZnO, whose lattice constant is equal to that of a ZnO thin film forming a channel layer 41, as that of the material. Thus, the channel layer 41, formed on the substrate 46, can be formed of the ZnO thin film of proper quality without crystal defects. |
