| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing method for a semiconductor wafer in which the dielectric strength of an oxide film is not deteriorated and in which particles on the surface of the semiconductor wafer are reduced. SOLUTION: After a primary polishing operation, the inspection of the wafer is executed, the correction working operation of the wafer is executed, a finish polishing operation is treated continuously, and an immediately prior polishing operation whose polishing rate is larger than that of the finish polishing operation is executed to the silicon wafer. As a result, the particles stuck to the surface of the wafer and a spontaneous oxide film formed on the surface of the wafer during the inspection of the wafer and during the correction working operation can be removed simultaneously in a shorter time than in a case where the wafer is treated by only the finish polishing operation. Thereby, the silicon wafer on which the particles are small can be obtained. Since the spontaneous oxide film is removed not by an HF cleaning operation, the deterioration of the dielectric strength of the oxide film can be prevented.</p> |
