| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of polishing semiconductor crystal wafer by which a semiconductor wafer having a low haze level can be obtained stably, and to provide a semiconductor crystal wafer. SOLUTION: When a surface active agent is added to a polishing solution used by a polishing device, the mechanical action of the polishing cloth of the polishing device can be reduced by the lubricating action of the agent. Consequently, the semiconductor crystal wafer having a low haze level can be obtained stably.</p> |
