LAMINATE, FORMING METHOD FOR THE LAMINATE, INSULATING FILM AND SUBSTRATE FOR SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To obtain a forming method of an insulating film for a semiconductor, which is superior in adhesion to a film formed by the CVD (Chemical Vapor Deposition) method as an interlayer insulating film material, in a semiconductor element or the like. SOLUTION: A laminate is constituted by laminating a film (A) formed by heat curing an alkoxysilane compound hydrolysis condensate (a), with an average inertial radius of 10 to 30 nm and a film (B) formed by heat curing an alkoxysilane hydrolysis condensate (b) with an average inertial radius of less than 10 nm. The difference in the average inertial radii between the alkoxysilane hydrolysis condensate (a) and the alkoxysilane hydrolysis condensate (b) is more than 5 nm.