SILICON SINGLE CRYSTALLINE WAFER PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTALLINE WAFER AND SILICON EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a lift-pin method silicon single crystalline wafer processing apparatus which enables to obtain a silicon single crystalline wafer having a good appearance, to provide a method of manufacturing a silicon epitaxial wafer, and to provide a silicon single crystalline wafer which exhibits a good appearance even when mounted and demounted on a lift-pin method susceptor for processing. SOLUTION: The silicon single crystalline wafer processing apparatus comprises a lift pin 14 which is so provided as to move up and down with respect to a susceptor 12 and which moves up and down, supporting a silicon single crystalline wafer 19 from the lower surface side, to mount and demount the silicon single crystalline wafer 19 on the susceptor 12 along with the up and down movement. The lift pin 14 is provided with an end face which is to be brought into contact with a main rear face of the silicon single crystalline wafer 19. The contact end face has a convex surface projecting upwards and is polished.