发明名称 SUBSTRATE PROCESSING SYSTEM
摘要 <p>PROBLEM TO BE SOLVED: To shorten the heating time of a wafer while decreasing the number of components. SOLUTION: The substrate processing system comprises a reaction tube 23 for processing a wafer W, and a boat 20 for holding the wafer W. A plurality of wafers W are held in the boat 20 while being arranged in the direction perpendicular to the major surface W1 of the wafer and then heat treated. The boat 20 comprises a bottom plate 31, intermediate plates 32-34, a top plate 35, and columns 40 and is constituted of discs 30 made of silicon carbide (SiC). The boat 20 is self heated by supplying power from the columns 40 and the temperature of the wafer W held in the boat is raised to a specified level.</p>
申请公布号 JP2003100649(A) 申请公布日期 2003.04.04
申请号 JP20010297180 申请日期 2001.09.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHIRATORI WAKAKO;HOSAKA EIJI
分类号 H01L21/683;H01L21/22;H01L21/68;(IPC1-7):H01L21/22 主分类号 H01L21/683
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