| 摘要 |
<p>PROBLEM TO BE SOLVED: To permit mass production with respect to a large size glass substrate also by reducing the amount of a catalyst element in the element formation area of a crystallized crystalline silicon film. SOLUTION: A first element or Ni(nickel), promoting the crystallization of an amorphous silicon film, is added to the amorphous silicon film formed on a substrate having an insulating surface, and a first heating treatment is applied to grow the crystal of the amorphous silicon film. Thereafter, a second element having the attracting effect for Ni selectively or P(phosphor) is added to a part of the crystallized amorphous silicon film to make amorphous the area to which P is added. Further, a second heating treatment is applied while retaining at least the area to which P is added and which is made amorphous under a condition that it is not crystallized completely yet, to move the Ni in the crystalline silicon film into the area to which P is added to make the same amorphous, by the second heating treatment and form the active(channel) area of the semiconductor device employing an area except the area to which P is added.</p> |
