| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that breakdown due to heat occurs since heat that is generated in the actuation of a semiconductor device cannot be dissipated to the outside efficiently. SOLUTION: The package for accommodating a semiconductor device comprises a board 1, a frame-like insulator 2 having a wiring layer 6, and a lid body 3. The frame-like insulator 2 is formed by sintered oxide made of 10 to 68 mol% BaO, 9 to 50 mol% SnO2 , and 13 to 72 mol% B2 O3 . At the same time, the board 1 is made of tungsten and copper, and has a three-layer structure. In the three-layer structure, upper and lower layers 1b and 1d made of 70 to 95 wt.% tungsten and 5 to 30 wt.% copper are provided on both surfaces of an intermediate layer 1c made of 35 to 65 wt.% tungsten and 35 to 65 wt.% copper. |
