发明名称 METHOD FOR MANUFACTURING WIRING PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a wiring pattern having a substantially identical wiring width by using a super resolution technology able to realize a fine pattern beyond the resolution of an exposure apparatus by combining process technologies without raising the resolution limit of the exposure apparatus. SOLUTION: A method for manufacturing a wiring pattern in which wiring layers having a substantially identical width are juxtaposed with substantially identical intervals, comprising a step for forming a chemical amplification resist layer on the wiring material layer and a mask forming process for forming a plurality of resist masks juxtaposed with substantially identical intervals and having a substantially identical width by patterning the chemical amplification resist layer, wherein the mask forming process further includes a process for forming sacrificial resist masks, which are juxtaposed to the resist mask with intervals substantially identical to those of the resist mask outside of the plurality of resist masks.
申请公布号 JP2003100754(A) 申请公布日期 2003.04.04
申请号 JP20010296662 申请日期 2001.09.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIMURA HIROSHI
分类号 H01L21/3205;H01L21/8242;H01L27/108 主分类号 H01L21/3205
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