| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a nitride-based semiconductor device, by which the adhesion is improved between an electrode layer and a nitride- based semiconductor layer, and a reliable nitride-based semiconductor device can be formed. SOLUTION: The forming method of the nitride-based semiconductor device comprises a process for forming a p-type contact layer 8, a process for heat- treating the p-type contact layer 8, and a process for forming a p-side electrode 13 on the p-type contact layer 8 thereafter. |
