| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film deposition system and a thin film deposition method capable of shaping a thin film on a substrate in a simple and inexpensive process. SOLUTION: A semiconductor wafer 20 and shaping member 30 are arranged to oppose each other. An insulating layer 21 of a gel state is formed on the surface of the semiconductor wafer 20. Convex portions or protruded fins (31, 32) are formed on the shaping surface 30a of the shaping member 30. When the semiconductor wafer 20 and the shaping member 30 are made to closely contact each other and then separated, the shape of the shaping surface 30a of the shaping member 30 is transferred to the insulating film 21. Thus, concave portions or groove portions (41, 42) are formed on the insulating film 21. Subsequently, after metal wiring material 45 is formed on the entire surface and the surface is graded or polished by a CMP processing, a metal wiring film 45W is obtained in the state where it is buried in the concave portions or the groove portions (41, 42). |
