发明名称 MASK AND ITS MANUFACTURING METHOD, ELECTROLUMINESCENCE EQUIPMENT AND ITS MANUFACTURING METHOD AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a highly precise mask and its manufacturing method, EL equipment and its manufacturing method, and an electric device. SOLUTION: The mask has a single crystal substrate 10, of which the front and back surface consists of the face (110) of the mirror index. Two or more penetration holes 18 are formed in the single crystal substrate 10. The opening form of each the penetration holes 18 is a polygon, of which the each edges are located in parallel with one of the faces among the faces of a group expressed with (111). The wall surfaces of each the penetration holes 18 are the face (111). Corresponding to the form of the above penetration holes 18, the manufacturing method of the mask forms the openings in an etching-proof film, and etches the single crystal substrate 10 into it.
申请公布号 JP2003100452(A) 申请公布日期 2003.04.04
申请号 JP20010287019 申请日期 2001.09.20
申请人 SEIKO EPSON CORP 发明人 YOTSUYA SHINICHI
分类号 H05B33/10;C23C14/04;C30B33/00;G03F7/12;H01L51/50;H01L51/56;H05B33/12;(IPC1-7):H05B33/10;H05B33/14 主分类号 H05B33/10
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