发明名称 INSULATING FILM BREAKDOWN FUSE
摘要 PROBLEM TO BE SOLVED: To reduce the area of a circuit using fuses and stabilize the operation thereof. SOLUTION: Two trench capacitors are formed in proximity to each other in a semiconductor substrate 11. The electrodes of the capacitors on one side are impurity diffusion layers 17A and 17B, which are electrically connected with each other through a buried diffusion layer 12. The electrodes of the capacitors on the other side are conductive polysilicon layers 19A and 19B. The conductive polysilicon layer 19A is connected with an electrode 20A, and the conductive polysilicon layer 19B is connected with an electrode 20B. Writing operation is performed by applying high voltage to the region between the electrodes 20A and 20B to break down insulating films 18A and 18B. Reading operation is performed by applying voltage to the region between the electrodes 20A and 20B to detect current paths between the electrodes.
申请公布号 JP2003100990(A) 申请公布日期 2003.04.04
申请号 JP20010289736 申请日期 2001.09.21
申请人 TOSHIBA CORP 发明人 NAKANO TAKESHI
分类号 H01L21/82;G11C29/00;G11C29/04;H01L27/10;(IPC1-7):H01L27/10 主分类号 H01L21/82
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