发明名称 FIELD EMISSION-TYPE ELECTRON SOURCE
摘要 PURPOSE: A field emission-type electron source is provided to suppress deterioration of electron emission characteristics and achieve enhanced thermal resistance. CONSTITUTION: A field emission-type electron source(10) comprises a lower electrode(2), an electron transit layer(6) formed on the lower electrode and composed of a composite nanocrystal layer including polycrystalline silicon and a number of nanocrystalline silicon residing adjacent to a grain boundary of the polycrystalline silicon, and a surface electrode(7) formed on the electron transit layer, in which the field emission-type electron source is adapted to allow an electron passing through the electron transit layer to be emitted through the surface electrode, wherein at least a portion of the surface electrode is made of layer-structured conductive carbide or layer-structured conductive nitride.
申请公布号 KR20030026878(A) 申请公布日期 2003.04.03
申请号 KR20020057864 申请日期 2002.09.24
申请人 MATSUSHITA ELECTRIC WORKS, LTD. 发明人 KOMODA TAKUYA;TAKEGAWA YOSHIYUKI;AIZAWA KOICHI;HATAI TAKASHI;ICHIHARA TSUTOMU;HONDA YOSHIAKI;WATABE YOSHIFUMI;BABA TORU
分类号 H01J1/30;H01J1/00;H01J1/304;H01J1/312;H01J9/02;H01J37/06;(IPC1-7):H01J1/30 主分类号 H01J1/30
代理机构 代理人
主权项
地址