发明名称 |
FIELD EMISSION-TYPE ELECTRON SOURCE |
摘要 |
PURPOSE: A field emission-type electron source is provided to suppress deterioration of electron emission characteristics and achieve enhanced thermal resistance. CONSTITUTION: A field emission-type electron source(10) comprises a lower electrode(2), an electron transit layer(6) formed on the lower electrode and composed of a composite nanocrystal layer including polycrystalline silicon and a number of nanocrystalline silicon residing adjacent to a grain boundary of the polycrystalline silicon, and a surface electrode(7) formed on the electron transit layer, in which the field emission-type electron source is adapted to allow an electron passing through the electron transit layer to be emitted through the surface electrode, wherein at least a portion of the surface electrode is made of layer-structured conductive carbide or layer-structured conductive nitride.
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申请公布号 |
KR20030026878(A) |
申请公布日期 |
2003.04.03 |
申请号 |
KR20020057864 |
申请日期 |
2002.09.24 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
KOMODA TAKUYA;TAKEGAWA YOSHIYUKI;AIZAWA KOICHI;HATAI TAKASHI;ICHIHARA TSUTOMU;HONDA YOSHIAKI;WATABE YOSHIFUMI;BABA TORU |
分类号 |
H01J1/30;H01J1/00;H01J1/304;H01J1/312;H01J9/02;H01J37/06;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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